利用高温固相法制备了一系列不同Pr³⁺掺杂浓度的CsLa（WO₄）₂荧光粉，测试了X射线衍射（XRD）、漫反射光谱、激发光谱、发射光谱与荧光衰减曲线，讨论了光致发光光谱与浓度、温度的联系，并基于荧光强度比（FIR）技术计算得出温度传感相关参数。CsLa（WO₄）₂∶Pr³⁺主要呈现源自³P₀和¹D₂能级的发射，对应的最佳掺杂浓度分别为0.03和0.01，经证实电偶极⁃电偶极相互作用导致了浓度猝灭。³P₀与¹D₂能级的发射随温度变化趋势不同，这主要归因于Pr³⁺⁃W⁶⁺的价间电荷迁移（IVCT）、交叉弛豫（CR）和多声子弛豫（MPR）等过程的综合作用。由于上述发射表现出不同的浓度和温度依赖特性，实现了颜色可调谐发光。基于³P₁→³H₅/³P₀→³H₄热耦合能级对和¹D₂→³H₄/³P₀→³H₄非热耦合能级对的FIR，计算得到相对灵敏度分别为586.01/T² K^-1和1 071.78/T² K^-1，表明该材料在温度传感领域具有潜在应用价值。

利用高温固相法在1 200℃制备了一系列红色荧光粉（Y_1-x）₆TeO₁₂：xEu³⁺（x=0.1~0.5）材料。对样品进行了X射线衍射、形貌特征、激发和发射光谱、浓度猝灭、热稳定性、荧光衰减曲线以及发光二极管封装与光色电性能等方面的分析与探究。结果表明：该红色荧光粉样品能被近紫外光（393 nm处）和蓝光（464 nm处）有效激发，在632 nm处表现出较强的红光发射。根据荧光强度与掺杂浓度的变化趋势，确定出最佳Eu³⁺掺杂量为x=0.3，更多的掺杂量引起浓度猝灭。进一步分析激活剂Eu³⁺间能量传递类型，得出电偶极-电偶极作用导致了浓度猝灭。（Y_0.7）₆TeO₁₂：0.3Eu³⁺在150℃时积分发光强度是室温的76.5%，热激活能为0.196 9 eV。该样品的荧光寿命为813 μs，色坐标值为（0.637 6，0.343 1），并基于板上芯片工艺进行了发光二极管封装，对光色电性能进行了表征。（Y_1-x）₆TeO₁₂：xEu³⁺荧光粉表现出了良好的发光特性、发光热稳定性及色纯度，在白光发光二极管中具有潜在的应用价值。

We investigate the temperature dependence of the emission spectrum of a laser-induced semiconductor (Ge and Si) plasma. The change in spectral intensity with the sample temperature indicates the change of the laser ablation mass. The reflectivity of the target surface is reduced as the sample is heated, which leads to an increase in the laser energy coupled to the surface of the sample and eventually produces a higher spectral intensity. The spectral intensities are enhanced by a few times at high temperatures compared with the cases at low temperatures. The spectral intensity of Ge is enhanced by 1.5 times at 422.66 nm, and 3 times at 589.33 nm when the sample temperature increases from 50°C to 300°C. We can obtain the same emission intensity by a more powerful laser or by less pulse energy with a higher sample temperature. Based on experimental observations we conclude that the preheated sample can improve the emission intensity of laser-induced semiconductor plasma spectroscopy.